Evidence for the existence of a complex isoelectronic center in Si : In |
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| Authors: | David H Brown SR Smith |
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| Institution: | University of Dayton Research Institute Dayton, Ohio, 45469, U.S.A. |
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| Abstract: | The effect of 1 MeV electron irradiation and a 100° annealing stage on the intensity of the U2 line at 1.1182 eV is presented. Evidence is provided from intensity vs. excitation power measurements that the U2 radiative recombination involves only a single exciton. Eight models are discussed, with a complex isoelectronic center being favored. |
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