Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots |
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| Authors: | X M Wen L V Dao P Hannaford S Mokkapati H H Tan C Jagadish |
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| Institution: | (1) Department of Physics, Yunnan University, Kunming, Yunnan, 650091, P.R. China;(2) Centre for Atom Optics and Ultrafast Spectroscopy, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, Victoria, 3122, Australia;(3) Department of Electronic Materials and Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200, Australia |
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| Abstract: | We investigate the electron dynamics of p-type modulation doped and undoped
InGaAs/GaAs quantum dots using up-conversion photoluminescence at low
temperature and room temperature. The rise time of the p-doped sample is
significantly shorter than that of the undoped at low temperature. With
increasing to room temperature the undoped sample exhibits a decreased rise
time whilst that of the doped sample does not change. A relaxation mechanism
of electron-hole scattering is proposed in which the doped quantum dots
exhibit an enhanced and temperature independent relaxation due to excess
built-in holes in the valence band of the quantum dots. In contrast, the
rise time of the undoped quantum dots decreases significantly at room
temperature due to the large availability of holes in the ground state of
the valence band. Furthermore, modulation p-doping results in a shorter
lifetime due to the presence of excess defects. |
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| Keywords: | 78 47 Cd Time resolved luminescence 78 67 Hc Quantum dots |
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