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Synthesis and characterization of Ag-doped p-type ZnO nanowires
Authors:Guoping Wang  Sheng Chu  Ning Zhan  Huimei Zhou  Jianlin Liu
Institution:(1) Departments of Physics and Electrophysics, University of Southern California, Los Angeles, CA 90089, USA;(2) Department of Physics, University of California, Irvine, CA 92697, USA;(3) Institute of Solid State Physics, University of Jena, D-07743 Jena, Germany;
Abstract:P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor deposition process. The incorporation of Ag was confirmed by selected-area energy-dispersive x-ray spectroscopy. The formation of acceptor states was demonstrated by temperature and excitation power-dependent photoluminescence measurements. Characterization of field-effect transistors using Ag-doped ZnO nanowires as channels showed p-type conductivity of the nanowires with a hole concentration of 4.9×1017 cm−3 and a carrier mobility of approximately 0.18 cm2 V−1 s−1.
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