| Affiliation: | (1) National Laboratory of Solid State Microstructures and Department of Materials, Science and Engineering, Nanjing University, 210093 Nanjing, China;(2) National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 210093 Nanjing, China |
| Abstract: | Bi3.25Pr0.75Ti3O12 (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600 °C rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90–100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700 °C annealed BPT films is around 20  C/cm2 at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8×109 cycles, while a  30% reduction of non-volatile polarization was observed. PACS 81.15.-z; 77.55.+f; 77.22.Gm |
