| 气体流量及配比对CVD SiC膜层的影响 |
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| 引用本文： | 霍艳丽,陈玉峰.气体流量及配比对CVD SiC膜层的影响[J].人工晶体学报,2009(Z1). |
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| 作者姓名： | 霍艳丽 陈玉峰 |
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| 作者单位： | 中国建筑材料科学研究总院高性能陶瓷研究所; |
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| 摘 要： | 本文以甲基三氯硅烷(MTS)为先驱体原料,H2为载气,采用化学气相沉积工艺在反应烧结碳化硅表面制备SiC致密膜层。研究了不同反应气体流量及配比对CVD碳化硅膜层的影响。结果表明:反应气体的流量对膜层的表面形貌影响较大,较大的气流量容易使膜层剥落;减小反应气体流量有利于改善膜层的均匀性。H2/MTS比例影响沉积SiC膜层的相组成。当沉积温度为1200℃,H2/MTS比例为6∶1时,得到的膜层由SiC和C两相组成;当H2/MTS比例为12∶1时,膜层由SiC和Si两相组成;当H2/MTS比例为10∶1时,得到单一相的SiC膜层。在优化的工艺参数下,制备出致密的CVD膜层,经过光学加工后膜层的表面粗糙度为0.72 nm,平面度RMS为0.015λ(λ=0.6328μm)。
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| 关 键 词： | CVD SiC膜层 流量 气体配比 |
Effect of Gas Flow and Gas Ratio on CVD SiC Coating |
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| HUO Yan-li,CHEN Yu-feng.Effect of Gas Flow and Gas Ratio on CVD SiC Coating[J].Journal of Synthetic Crystals,2009(Z1). |
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| Authors: | HUO Yan-li CHEN Yu-feng |
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| Institution: | High Performance Ceramic Institute;China Building Materials Academy;Beijing 100024;China |
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| Abstract: | SiC compact films were fabricated on surface of reaction sintering SiC by chemical vapor depositioc(CVD) method using MTS as raw material,H2 as carrier gas.The effects of gas flow and gas ratio on SiC coatings were investigated.The results indicated that the gas flow has great influenced on the surface morphology.The coating prepared with large gas flow flaked away easily and it was beneficial to get even coating to reduce the gas flow.The ratio of H2 to MTS can influence the phase composition of coating.At... |
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| Keywords: | CVD SiC coating flow gas ratio |
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