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Time resolved photoluminescence near the “band gap” in amorphous silicon
Authors:S. Kurita  W. Czaja  S. Kinmond
Affiliation:Laboratoire de Physique Appliquée, EPF Lausanne, Switzerland;Carnegie Laboratory of Physics, University of Dundee, Scotland, U.K.
Abstract:Two broad luminescence bands in weakly hydrogenated (glow discharge) undoped amorphous silicon have been observed using time resolved spectroscopy on a nanosecond timescale. Whereas the luminescence decay of the low energy band has been found to be sample independent, the peak position of the luminescence does show a sample dependence. We propose an intrinsic origin of this luminescence.
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