Saturation of the free exciton resonance in GaAs |
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| Authors: | HM Gibbs AC Gossard SL McCall A Passner W Wiegmann TNC Venkatesan |
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| Institution: | Bell Laboratories. Murray Hill, New Jersey 07974, USA;Crawford Hill Laboratories, Bell Laboratories, Holmdel, New Jersey 07733, USA |
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| Abstract: | The transmission of 500 ns pulses through GaAs-AlGaAs heterostructures has been studied as a function of light intensity (0.015 to 50 kW/cm2) and wavelength (810 to 840 nm). The intrinsic exciton absorption (λ=818 nm at 10°K) can be modeled by the sum of a small unsaturable background and a dominant term which saturates as a Bloch resonance with a saturatiom parameter of about 150 W/cm2. |
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