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Dynamics of hot carrier cooling in photo-excited GaAs
Authors:RF Leheny  Jagdeep Shah  RL Fork  CV Shank  A Migus
Institution:Bell Telephone Laboratories, Incorporated Holmdel, N.J., USA
Abstract:Carrier relaxation following excitation with subpicosecond optical pulses, determined from time resolved nearband gap transmission spectrum changes, is described for GaAs. For n < 5×1017cm-3 the observed relaxation can be related to carrier-phonon interaction, but at higher densities the rate of relaxation is significantly slowed, possibly due to carrier screening.
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