Infrared absorption spectra of amorphous silicon with gold |
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Authors: | E Hauser J Tauc JJ Hauser |
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Institution: | Division of Engineering and Department of Physics, Brown University, Providence, RI 02912, U.S.A.;Bell Laboratories, Murray Hill, NJ 07974, U.S.A. |
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Abstract: | We determined the optical constants below the absorption edge of amorphous films of Si1?xAux (x between 0.07 and 0.30) prepared by getter sputtering in argon. In the range 0.15 to 0.5 eV we found that the absorption increased with increasing Au content and could be described by Mott's formula for a.c. conductivity σ(ω) ≈ ω2In (I0/ω)]4 with I0 ? 4.5 eV at x = 0.11 and 3.8 eV at x = 0.29; in the range 10–100 K it changed only slightly with temperature. The absorption is interpreted as due to direct transitions involving Au atoms. |
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