Acceptor excited states in indium phosphide |
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Authors: | P.J. Dean D.J. Robbins S.G. Bishop |
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Affiliation: | Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcestershire, England |
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Abstract: | Selective donon-acceptor pair luminescence and luminescence excitation spectra reveal acceptor excitations to all excited states of principal quantum number 2, odd as well as even parity. These transition energies are independent of the D-A pair separation R for sufficiently large R and are then identical to those on isolated acceptors. However, they decrease significantly at small R and some splittings are revealed in our measurements on a bulk grown crystal in which the most common contaminant acceptor Zn is dominant. The p state transition energies are used together with the known ionization energy of the Zn acceptor to derive valence band parameters for InP according to the theory of Baldereschi and Lipari. We find γ1 = 5.6 ± 0.7, γ2 = 2.0 ± 0.3, γ3 = 2.4 ± 0.3, where γ1 is adjusted to fit the cyclotron resonance data of Leotin et al. Some reservations concerning the completeness of this theory are acknowledge. Information on the s acceptor excited state is consistent with that obtained from acceptor bound exciton “two-hole” satellites for this remarkable quality bulk crystal. |
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