Fine structure in optical transitions from 3d and 4d core levels to the lower conduction band in Ga-V and In-V compounds |
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Authors: | DE Aspnes M Cardona V Saile M Skibowski G Sprüssel |
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Institution: | Bell Laboratories, Murray Hill, NJ 07974, U.S.A.;Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Federtal Republic of Germany;Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80, Federal Republic of Germany;Sektion Physik, Universität München, 8000 Munchen 40, Federal Republic of Germany;Institut für Experimentalphysik, Universität Kiel, 2300 Kiel 1, Federal Republic of Germany |
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Abstract: | We investigate fine structure in energy derivative reflectance (EDR) spectra near 20–21 eV in GaP, GaAs, and GaSb, and near 18–20 eV in InP, InAs, and InSb. Derived energy values for Xc1 thresholds in GaP and GaSb, and Lc1 and Xc1 thresholds in GaAs, agree well with previous Schottky barrier electroreflectance (ER) results. L-X structure splittings in EDR spectra of InAs and InSb, for which Schottky barrier ER measurements cannot be performed, are 0.29 and 0.44 eV, respectively. Estimates of expected locations of these structures, based on XPS and absorption data and band structure calculations, indicate energy deficits of 0.2 eV for In4d-Lc1 and 0.5 eV for In4d-Xc1 transitions, respectively. |
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