ESR of Ni doped amorphous chalcogenide semiconductors

ESR signals with g = 2.08 and 2.13 due to Ni were observed for evaporated (Ge_0.32Se_0.32Te_0.32As_0.4) 100_-xNi_x and $\text{(Ge}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Se}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{100}{}_{\mathrm{-x}}\text{Ni}{}_{\mathrm{x}}$ films respectively. The large increase of the electrical conductivity by the addition of Ni is discussed in connection with the ESR signal. Bulk glasses prepared by melt-quenching are also investigated for comparison.