IBM Thomas J. Watson Research Center P.O. Box 218 Yorktown Heights, New York 10598, USA;Physical Sciences Laboratory University of Wisconsin Stoughton, Wisconsin 53589, USA
Abstract:
Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions
![/></figure> for all four valence bands GaAs along the 110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined.</td>
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