Comparison of Shubnikov-de Haas effect and cyclotron resonance on Si(100) MOS transistors under uniaxial stress

The stress induced population of the non-equivalent subbands E₀ to E′₀ is investigated by measurements of the magnetoconductivity — the Shubnikov-de Haas oscillations — and the cyclotron resonance taken on the same MOS transistor under identical conditions. In cyclotron resonance with increasing stress, a gradual transfer of carriers from E₀ to E′₀ is observed, whereas the Shubnikov-de Haas periodicity is unaffected and always yields a valley degeneracy of two. A domain model is required to resolve this apparent discrepancy.