High temperature defects in electron irradiated semiconductors HgCdTe,PbSnTe |
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Authors: | AV Voitsehovski VN Broudnyi YuV Lilenko MA Krivov AS Petrov |
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Institution: | The Siberian Phyisical-Technical Institute at Tomsk State University, 634050, Tomsk, USSR |
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Abstract: | The peculiarities of defect formation in n- and p-type conductivity HgCdTe and PbSnTe crystals after electron irradiation (2 MeV, 300 K) up to 2 × 1018 cm-2 are examined. It has been found that irradiation results in formation of n-type conductivity crystals with final parameters that are determined by the composition of initial samples. The annealing of radiation defects occurs in the 360–470 K temperature range. It has been believed that the change of HgCdTe, PbSnTe properties after electron irradiation at 300 K are connected with formation of radiation defects, including Te vacancies. |
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