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GaAs/SiO_2超晶格的制备和Raman光谱研究
引用本文:衡成林,王孙涛,秦国刚,王敬,王永鸿,陈坚邦,濮玉梅,陈晶. GaAs/SiO_2超晶格的制备和Raman光谱研究[J]. 光散射学报, 2000, 12(3): 142-146
作者姓名:衡成林  王孙涛  秦国刚  王敬  王永鸿  陈坚邦  濮玉梅  陈晶
作者单位:1. 北京大学物理系,北京,100871
2. 北京有色金属研究总院,北京,100088
3. 雷尼绍北京办事处,北京,100027
4. 北京大学电子显微镜实验室,北京,100871
摘    要:我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。

关 键 词:拉曼散射  超晶格  高分辨率电镜  磁控溅射
文章编号:1004-5929(2000)03-0142-05
修稿时间:1999-07-12

The Preparation of GaAs/SiO2 Superlattices and Their Raman Scattering Spectroscopy Study
HENG Cheng-lin,WANG Sun-tao,QIN Guo-gang,WANG Jing,WANG Yong-hong,CHEN Jian-bang,PU Yu-mei,CHEN Jing. The Preparation of GaAs/SiO2 Superlattices and Their Raman Scattering Spectroscopy Study[J]. Chinese Journal of Light Scattering, 2000, 12(3): 142-146
Authors:HENG Cheng-lin  WANG Sun-tao  QIN Guo-gang  WANG Jing  WANG Yong-hong  CHEN Jian-bang  PU Yu-mei  CHEN Jing
Abstract:We have successfully deposited four period amorphous GaAs/SiO 2superlattices (SL s) on p Si substrates using the magnetron sputtering technique. A high resolution electron microscopy image for the structure was obtained. After rapid thermal annealing at 800℃, the structural change of the amorphous GaAs layers in the SLs has been studied using Raman spectroscopy. The results show that for the unannealed sample and the sample annealed at 300℃, both GaAs and SiO 2layers are amorphous, while that after 800℃ thermal annealing, the GaAs layers in the SLs were partially crystallized.
Keywords:Raman scattering  superlattice  HRTEM  magnetron sputtering
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