| 硅基全光宽带太赫兹幅度调制器的研究 |
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| 引用本文： | 田伟,岐业,陈智,杨青慧,荆玉兰,张怀武. 硅基全光宽带太赫兹幅度调制器的研究[J]. 物理学报, 2015, 64(2): 28401-028401. DOI: 10.7498/aps.64.028401 |
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| 作者姓名： | 田伟 岐业 陈智 杨青慧 荆玉兰 张怀武 |
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| 作者单位： | 1. 电子科技大学, 电子薄膜与集成器件国家重点实验室, 成都 610054;2. 电子科技大学, 通信抗干扰技术国家级重点实验室, 成都 610054 |
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| 基金项目： | 国家自然科学基金重点项目，教育部科学技术研究重大项目，国家高新技术研究计划，教育部新世纪优秀人才资助计划，四川省杰出青年学术技术带头人计划，高校博士点专项科研基金(批准号:20110185130002)资助的课题.@@@@* Project supported by the National Natural Science Foundation of China，the Key Program Project of Chinese Ministry of Education，the National High-tech Research and Development Progran，the New Century Excellent Talent Foundation of Ministry of Education |
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| 摘 要： | 提出了一种基于掺金硅的全光学宽带太赫兹波幅度调制器, 研究了金(Au)点阵掺杂后硅(Si)体内的少数载流子寿命及其太赫兹波调制特性. 实验结果表明, 掺杂的Au原子为Si中的光生电子- 空穴对提供了有效复合中心, 使其少数载流子寿命由原来十几微秒降低至110 ns左右. 利用波长915 nm 调制激光作为抽运光源, 在340 GHz载波的动态调制测试中获得4.3 MHz的调制速率和21%的调制深度, 使Si基调制器的调制速率提高了两个数量级. 该全光太赫兹调制器可工作在整个太赫兹频段内, 具有极化不敏感特性, 因而在太赫兹波高速和宽带调控方面具有重要的应用价值, 也是构建光控型Si 基太赫兹功能器件的重要基础.
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| 关 键 词： | 太赫兹波 调制器 光控 掺金硅 |
| 收稿时间： | 2014-08-10 |
Optically tuned wideband terahertz wave amplitude mo dulator based on gold-dop ed silicon |
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| Tian Wei,Wen Qi-Ye,Chen Zhi,Yang Qing-Hui,Jing Yu-Lan,Zhang Huai-Wu. Optically tuned wideband terahertz wave amplitude mo dulator based on gold-dop ed silicon[J]. Acta Physica Sinica, 2015, 64(2): 28401-028401. DOI: 10.7498/aps.64.028401 |
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| Authors: | Tian Wei Wen Qi-Ye Chen Zhi Yang Qing-Hui Jing Yu-Lan Zhang Huai-Wu |
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| Affiliation: | 1. State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. National Key Laboratory of Science and Technology on Communication, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | In this paper, we present a broadband terahertz wave amplitude modulator based on optically-controlled gold-doped silicon. Gold dots with a diameter of 40 μm are used as a dopant source. Experimental results indicate that interstitial Au atoms provide effective recombination centers for photo-generated electron-hole pairs in Si body, leading to a significant decrease of the minority carrier lifetime from more than 10 μs to about 110 ns. Dynamic modulation measurement at 340 GHz carrier shows a modulation depth of 21% and a maximum modulation speed of 4.3 MHz. This modulator has advantages such as wideband operation, high modulation speed, polarization insensitivity, and easy manufacture by using the large-scale integrated technology, and thus can be widely used in terahertz technology. |
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| Keywords: | terahertz wave modulator optically tuned gold-doped Silicon |
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