Large-area microwave and radiofrequency plasma etching of polymers |
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| Authors: | A M Wrobel B Lamontagne M R Wertheimer |
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| Institution: | (1)  Groupe des Couches Minces and Department of Engineering Physics, Ecole Polytechnique, Station A, Box 6079, H3C 3A7 Montreal, Quebec, Canada;(2) Present address: Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Boczna, 5, 90-362 Lodz, Poland |
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| Abstract: | We have investigated O2/CF4 plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF4 concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure |
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| Keywords: | Plasma etching polymers microwave radiofrequency effect of structure |
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