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Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems |
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| Authors: | B Dong XL Lei |
| Institution: | (1) State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P.R. China, CN;(2) China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, P.R. China, CN |
| Abstract: | The linear dc and high-frequency transresistivity of coupled electron-hole systems are investigated using the Lei-Ting balance equations approach extended to include many-body corrections. A possible indirect method of experimentally measuring the dynamical transresistivity in the high frequency (terahertz) regime is designed basing on the detailed analysis on the relationship between the directly measurable resistivities in the electron- and hole-layer and the dynamical transresistance. The theoretically predicted dc transresistance is in good agreement with the experimental data for the given electron-hole system experimentally investigated. The calculated dynamical transresistance exhibits pronounced double-resonant structure, which can be attributed to the cooperation and competition between the two plasmon modes. It is pointed out that the behavior of the frequency-dependent transresistance is temperature-sensitive and the dynamical transport properties are essentially influenced by the short range correlations. Received: 1st April 1998 / Revised: 22 June 1998 / Accepted: 6 August 1998 |
| Keywords: | PACS 72 30 +q High-frequency effects plasma effects - 73 50 Mx High-frequency effects plasma effects |
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