Nanowelding of carbon nanotube-metal contacts: an effective way to control the Schottky barrier and performance of carbon nanotube based field effect transistors |
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Authors: | Nurbawono Argo Zhang Aihua Cai Yongqing Wu Yihong Feng Yuan Ping Zhang Chun |
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Institution: | Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore. |
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Abstract: | Schottky barriers formed at carbon nanotube (CNT)-metal contacts have been well known to be crucial for the performance of CNT based field effect transistors (FETs). Through first principles calculations we show that a nanowelding process can drastically reduce the Schottky barriers at CNT-metal interfaces, resulting in significantly improved conductivity of CNT-based FETs. The proposed nanowelding can be realized by either laser local heating or a heating process via a controllable pulse current. Results presented in this paper may have great implications in future design and applications of CNT-based electronics. |
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