Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces

This paper reports on the formation of a 2D electronic channel, i.e., a charge accumulation layer on the n-InGaN(0001) surface observed under adsorption of submonolayer Cs coatings. It is found that photoemission from the accumulation layer is excited by light in the InGaN transparency region. It is established that the potential well depth and the density of electronic states in the accumulation layer can be controlled by properly varying the Cs coverage. It is shown that the accumulation layer exhibits quantum-well effects. The photoemission matrix element is calculated, and the energy parameters of the accumulation layer are obtained. An oscillatory structure originating from the Fabry-Perot interference is revealed in the spectra of photoemission from the accumulation layer.