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Nature and singularities in the behavior of point defects in doped single crystals of A3B5 compounds
Authors:V. T. Bublik  M. G. Mil'vidskii  V. B. Osvenskii
Affiliation:(1) State Scientific-Research and Design Institute of the Rare-Metal Industry, USSR
Abstract:Conclusion In conclusion, It should be stressed that, as follows from the experimental material considered, a characteristic singularity of semiconductor compounds is the stability of the metastable state which occurs during dissociation of the supersaturated solid solution under relatively small supersaturation conditions. The defects being formed here (interstitial atoms, vacancies, their distinct association in the form of complexes or coagulated particles, presegregated, etc.) exert considerable influence on the physical properties of crystals. In the general case, the crystal defectiveness depends on the kind and concentration of the doping impurity, the deviation of the composition from stoichiometry, and the ingot cooling mode during growth.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 7–22, January, 1980.
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