Growth and characterization of 2-hydroxy-4-methoxybenzophenone single crystal using modified vertical Bridgman technique |
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Authors: | Suthan T Rajesh N P Mahadevan C K Bhagavannarayana G |
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Affiliation: | Centre for Crystal Growth, SSN College of Engineering, Kalavakkam-603110, India. |
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Abstract: | The 2-hydroxy-4-methoxybenzophenone single crystal has been grown by the modified vertical Bridgman technique using the double wall ampoule. The grown crystal was confirmed by single and powder X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy analyses. High resolution X-ray diffraction (HRXRD) analysis indicates the crystalline perfection of the grown crystal. The cutoff wavelength of the grown crystal was analyzed by optical studies. The dielectric measurements were carried out and the results indicate an increase in dielectric and conductivity parameters with the increase of temperature at all frequencies. The thermal property of the grown crystal was studied by thermo gravimetric (TG) and differential thermal analyses (DTA). |
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