Far infrared photoconductivity studies in silicon blocked impurity band structures |
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| Affiliation: | 1. School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi''an, 710129, PR China;2. Xi''an Key Laboratory of Functional Organic Porous Materials, Northwestern Polytechnical University, Xi''an, 710072, PR China;3. Shaanxi Engineering and Research Center for Functional Polymers on Adsorption and Separation, Sunresins New Materials Co. Ltd., Xi''an, 710072, China;1. Indian Institute of Remote Sensing (IIRS), Indian Space Research Organisation (ISRO), 04 Kalidas Road, Dehradun 248001, Uttarakhand, India;2. Faculty of Geo-Information Science and Earth Observation (ITC), University of Twente, Enschede 7514 AE, The Netherlands;3. Institute of Bio- and Geosciences: Agrosphere (IBG-3), Forschungszentrum Jülich GmbH, Jülich 52428, Germany;4. National Remote Sensing Centre (NRSC), Hyderabad 500037, Telangana, India |
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| Abstract: | We report two novel features in the photoconductive response of a boron doped Blocked Impurity Band (BIB) structure. In this structure which comprises a pure and a very doped photoconductive layer between ohmic contacts, spectra of impurities at an interface with the pure layer were evidenced in a process involving field assisted hopping among excited states. In addition, a peculiar photovoltaic response, with open circuit photovoltage surprisingly independent of the incident photon flux was measured and analysed. |
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