Improved Ligand-Field Theoretical Calculation of R-Line Pressure-Induced Shift of MgO:V2+ |
| |
Authors: | ZHANG Zheng-Jie and MA Dong-Ping |
| |
Affiliation: | 1. Department of Physics, Chengdu University of Technology, Chengdu 610059, China;2. Department of Applied Physics, Sichuan University, Chengdu 610065, China |
| |
Abstract: | By means of an improved ligand-field theory, the “pure electronic” PS andthe PS due to EPI of R line of MgO:V2+ have been calculated,respectively. The calculated results are in very good agreement with theexperimental data. The behaviors of the pure electronic PS of R line ofMgO:V2+ and the PS of its R line due to EPI are different. It is thecombined effect of them that gives rise to the total PS of R line, which hassatisfactorily explained the experimental results. The mixing-degree of|t22(3T1)e4T2〉and |t23 2E〉 in the wavefunction of R level and its variation withpressure have been calculated and analyzed. The comparison between thefeature of R-line PS of MgO:V2+ and that of MgO:Cr3+ has been made. |
| |
Keywords: | high-pressure effect electron-phonon interaction R line improved ligand-field theory |
|
| 点击此处可从《理论物理通讯》浏览原始摘要信息 |
|
点击此处可从《理论物理通讯》下载全文 |
|