Liquid phase epitaxial growth and characterization of thin In1−xGaxAsyP1–y layers lattice-matched to InP

Growth studies enabled the deposition of In_0.71Ga_0.29As_0.68P_0.32 single quantum well structures with InP or In_0.88Ga_0.12As_0.26P_0.74 confinement layers lattice-matched to (001) InP by liquid phase epitaxy (LPE). Well widths in the order of 50–100 Å have been achieved using a conventional step cooling technique. The physical characterization has demonstrated the capability of the employed method to produce multilayered heterostructures which display confined particle states; quantum mechanically induced blue-shifts of the low temperature PL-emission up to 125 meV were measured. A remarkable reduction of the FWHM values of the shifted PL peaks was attained by optimization of the growth conditions.