Investigation of the formation and growth processes of silicon carbide monocrystals

The formation and growth processes of SiC monocrystals from vapour phase by sublimation method have been investigated. It is shown that the peaks of the evaporation and growth whiskers are the centres of SiC monocrystals formation. One of the mechanisms of development of the whisker into SiC platelet is established. It is shown that on the naturally mirror like crystal face either the edge of the crystal or the screw dislocation, situated on the crystal edge, is the source of the steps. On the stepped crystal face the root of the crystal is the source of the steps.