| Abstract: | Two different methods were applied to examine the diffusion of phosphorus at grain boundaries in silicon. Five solar-cells processed on multicrystalline silicon were investigated. These cells are distinguished by different materials, diffusion-temperature, and further preparation. Enhanced diffusion at grain boundaries was observed in two of these cells with both methods. One solar cell also showed enhanced diffusion at dislocations. A correlation of the phosphorus diffusion and an enhanced recombination activity of the grain boundaries of these cells is found. |
