Abstract: | Single crystals of δ-In2Se3 were prepared in the solid state laboratory at Qena-Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In2Se3 was studied. The δ-phase In2Se3 sample appeared to be n-type. The ratio of the electron and hole mobilities are found to be μn/μp = 1.378. The effective masses of charge carriers are m = 1.3 × 10?30, m = 8.27 × 10?31 kg for holes and electrons, respectively. The diffusion coefficient was estimated to be Dn = 3.37 cm2/s and Dp = 2.45 cm2/s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τn = 70 × 10?16 s and τp = 8 × 10?14 s for both electrons and holes. The diffusion length of the electrons and holes are found to be Ln = 1.5 × 10?7 cm and Lp = 4.4 × 10?7 cm. |