Abstract: | Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuBIIIC chalcopyrite compounds. The results obtained for CuInSe2 are compared with experimental channeling spectra. Point defect concentrations up to about 1021 cm?3 are estimated for CuInSe2 single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe2 single crystals. |