Electrical and photoelectrical properties of chalcopyrite n-AgInS2 crystals |
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Authors: | A. Opanowicz,B. Koś cielniak-Mucha,V. Vassilev |
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Abstract: | The chalcopyrite n-type crystals have been grown from AgInS2 material having stoichiomtric Ag excess. The temperature dependence of the Hall effect in these crystals have been studied. The ionization energies of donors have been determined. The dependence of the photoconduction on the photon energy, the light intensity and the temperature in the n-AgInS2 crystals have been measured. The recombination model of photoconductor with one class of recombination centres has been proposed for explanation of the photoelectrical results. |
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