High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers |
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Authors: | D I Nikitichev Y Ding M Ruiz M Calligaro N Michel M Krakowski I Krestnikov D Livshits M A Cataluna E U Rafailov |
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Institution: | 1.School of Engineering, Physics and Mathematics,University of Dundee,Dundee,UK;2.Alcatel Thales III-V Lab,Palaiseau,France;3.Innolume GmbH,Dortmund,Germany |
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Abstract: | We report picosecond pulse generation with high peak power in the range of 3.6 W from monolithic passively mode-locked tapered
quantum-dot laser diodes, exhibiting low divergence and good beam quality. These results were achieved using a gain-guided
tapered laser geometry. The generation of picosecond pulses with high average power up to 209 mW directly from such tapered
lasers is also demonstrated, corresponding to 14.2 pJ pulse energy (14.65 GHz repetition rate). A comparison between the mode-locking
performance of these tapered lasers incorporating either five or ten layers of InAs/GaAs self-organized quantum dots in their
active layer is also presented. |
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