| 抗反射膜SiN的热退火特性 |
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| 引用本文： | 张书明,赛小峰.抗反射膜SiN的热退火特性[J].光子学报,1995,24(5):468-471. |
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| 作者姓名： | 张书明 赛小峰 |
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| 作者单位： | 中国科学院西安光学精密机械研究所半导体室 |
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| 摘 要： | 本文研究了PECVD抗反射膜SiN的热退火特性。测量结果表明,经过制备GaAs透射光阴极的热压粘结工艺的热退火处理SiN薄膜的折射率增加了约0.1,薄膜厚度减少了约15%.IR透射谱分析表明,这是由于退火后膜中H的释放而引起化学键比例变化所致。此项工作为透射式GaAs光阴极抗反射膜的设计和制备提供了依据。
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| 关 键 词： | GaAs透射光阴极 热退火 抗反射膜 |
| 收稿时间： | 1994-08-22 |
THE ANNEALING PROPERTIES OF SiN ANTI-REFLECTION THIN FILM |
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| Zhang Shuming,Sai Xiaofeng ,Hou Xun.THE ANNEALING PROPERTIES OF SiN ANTI-REFLECTION THIN FILM[J].Acta Photonica Sinica,1995,24(5):468-471. |
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| Authors: | Zhang Shuming Sai Xiaofeng Hou Xun |
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| Institution: | Xi’an Institute of Optics and Precision Mechanics, Academia Sinica 710068 |
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| Abstract: | Theannealing properties of PECVD SiN anti-reflection thin film are studied in this paper.The measurments show that after the annealing treatment,the refractive index of the films increases0.1 and the thickness of the films reduces 15%. The IR spectrum analyses indicates that thephenomenon resultsfrom the variations of the chemical bonds in the film. It may be helpful to designand manufacture the anti-reflection thin film for GaAs photocathod. |
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| Keywords: | GaAs transmission photocathod Anti-reflection thin film Annealing |
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