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Faraday dosimetry characteristics of PIII doping processes
Authors:Shu Qin Bradley  MP Kellerman  PL
Institution:Axcelis Technol. Inc., Beverly, MA, USA;
Abstract:A Faraday cup dosimetry system was developed and characterized to address the issues of plasma immersion ion implantation (PIII) dose measurements. Pure ion current was measured by using an electrostatic suppression mechanism combined with high-bandwidth fiber-optic electronics to isolate high-voltage pulses and eliminate the primary and secondary electron and displacement currents. The ion-current waveform measured by the Faraday cup was verified by an XPDP1 particle-in-cell simulation. All of the positively charged ions striking the target surface were counted for implant dose by the Faraday cup so that both high-energy implant dose during the pulse and low-energy implant dose between pulses can be separately determined. The dose of the high-energy implant during pulses, which is more influential on the junction depth, can be measured with a fairly good accuracy, although the low-energy implant dose cannot be accurately measured due to more complicated surface effects. Compared with other dosimetry methods for PIII doping processes, the Faraday dosimetry technique offers better repeatability and controllability for PIII processes due to its direct, in-situ manner.
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