Investigation of hillocks formation on (1 0 0) HgCdTe layers grown by MOCVD on GaAs epi-ready substrates |
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| Affiliation: | 1. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;2. Vigo System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland;1. Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S.K. Majumdar Marg, Delhi 110054, India;2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China;1. National Research Tomsk State University, 36 Lenin av., 634050 Tomsk, Russia;2. Siberian Physical Technical Institute TSU, 1 Novosobornata sq., 634050 Tomsk, Russia;3. Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, 13, akademika Lavrent’eva av., 630090 Novosibirsk, Russia;1. Department of Physics, Manipal Institute of Technology, Manipal University, Udupi, Karnataka 576104, India;2. Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalagangotri, Mangalore, Karnataka 574199, India;1. Department of Physics, Chung Yuan Christian University, Taoyuan City 32023, Taiwan;2. Center for Nano-Technology, Chung Yuan Christian University, Taoyuan City 32023, Taiwan;3. Graduate Institute of Electro-Optical Engineering, Tatung University, Taipei 10452, Taiwan;4. Department of Materials Science, National University of Tainan, Tainan 70005, Taiwan;5. Institute of Nuclear Energy Research, Longtan 32546, Taiwan;1. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia;2. Novosibirsk State University, Novosibirsk, Russia |
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| Abstract: | In this paper we present the recent progress in the growth of (1 0 0) HgCdTe epilayers using metal organic chemical vapour deposition on GaAs epi-ready substrates. Particular progress has been achieved in the reduction of macro-defects known as “hillocks”, revealed on the surface of HgCdTe epilayers with (1 0 0) crystallographic orientation. The large-scale defects can arise from such sources as poor substrate processing, dust and remnants from previous deposition, and non optimal parameters of nucleation and growth process. In our experiment, hillocks density was decreased to <102 cm−2 by proper choice of the growth parameters.Obtained epilayers are suitable for device fabrication. So far, significant improvements has been obtained in photoconductors operated at near-room temperatures. Devices fabricated from (1 0 0) HgCdTe have about one order of magnitude higher voltage responsivity than their (1 1 1) B counterparts. |
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| Keywords: | HgCdTe Hillocks Macro-defects MOCVD Infrared detectors |
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