Synthesis and thermoelectric properties of composite oxides in the pseudobinary system ZnO-Ga2O3 |
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| Affiliation: | 1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan;1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China;2. Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China;3. College of Materials, Shanghai Dianji University, Shanghai, 201306, China;1. School of Physics, Shandong University, Jinan 250100, PR China;2. Laboratory for Research in Advanced Materials, Department of Physics, University of Science and Technology Bannu, Bannu 28100, Khyber Pakhtunkhwa, Pakistan;3. Department of Physics, Islamia College Peshawar, Peshawar 25120, Khyber Pakhtunkhwa, Pakistan;4. Department of Civil Engineering, International Islamic University, Islamabad, Pakistan;5. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;1. Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, India;2. Advanced Physics Laboratory, Department of Physics, University of Pune, Pune 411 007, India |
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| Abstract: | Phase relations in the pseudobinary system ZnO-Ga2O3 were investigated at 1723 K. The homologous phase Ga2O3(ZnO)m was formed in a region 9 ≦ n ≦ 38 for ZnO: Ga2O3 = n: 1, and Ga-doped ZnO (wurtzite structure) was in n ≧ 398. In between the two regions (i.e. 38 < n < 398) a composite of Ga-doped ZnO and the homologous phase Ga2O3(ZnO)mmax (mmax ≈ 38) was formed. Thermoelectric properties of the composite were examined along with Ga-doped ZnO and the homologous phase Ga2O3(ZnO)33. In the composite, the homologous phase appears to be very effective in lowering the thermal conductivity. As a result of a trade-off relationship between the power factor and the thermal resistivity, thermoelectric performance happened to be roughly the same for the composite and Ga-doped ZnO samples. |
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| Keywords: | Thermoelectric property Zinc oxide Homologous phase X-ray diffraction Composite material |
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