Empirical expression for the composition and temperature dependence of the energy gap in InAlSb期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Empirical expression for the composition and temperature dependence of the energy gap in InAlSb

Affiliation:	1. ONERA, Chemin de la Hunière, 91761 Palaiseau, France;2. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France;3. CNRS, IES, UMR 5214, F-34000 Montpellier, France;1. Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;2. Advanced Optical Technology (AOT) Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand;3. Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, National Science and Technology Development Agency (NSTDA), Chachoengsao 24000, Thailand;1. Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;2. Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland;3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Sec.4, Roosevelt Rd., Taipei 10617, Taiwan

Abstract:	An empirical expression for the energy bandgap as a function of alloy composition x and temperature for In₁₋_xAl_xSb was reported. The In₁₋_xAl_xSb epitaxial layers were grown by molecular beam epitaxy (MBE) on InSb(1 0 0) substrate, utilizing a p⁺–p⁺–n–n⁺ structure. High resolution X-ray diffraction was used to characterize the epitaxial layers. The Al composition of 2.8% was obtained by assuming the Bragg’s formula and Vegard’s law. Spectral response measurement of the diodes has been employed to investigate the temperature dependence of the band gap of In₁₋_xAl_xSb alloys in the range between 77 K and 260 K. The calculated results for energy gap of InAlSb were in good agreement with the available data and our experimental observation.

Keywords:	Energy gap Molecular beam epitaxy Moss- Burstein effect
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