Empirical expression for the composition and temperature dependence of the energy gap in InAlSb期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Empirical expression for the composition and temperature dependence of the energy gap in InAlSb

Institution:	1. ONERA, Chemin de la Hunière, 91761 Palaiseau, France;2. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France;3. CNRS, IES, UMR 5214, F-34000 Montpellier, France;1. Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand;2. Advanced Optical Technology (AOT) Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand;3. Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center, National Science and Technology Development Agency (NSTDA), Chachoengsao 24000, Thailand;1. Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland;2. Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland;3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Sec.4, Roosevelt Rd., Taipei 10617, Taiwan

Abstract:	An empirical expression for the energy bandgap as a function of alloy composition x and temperature for In₁₋_xAl_xSb was reported. The In₁₋_xAl_xSb epitaxial layers were grown by molecular beam epitaxy (MBE) on InSb(1 0 0) substrate, utilizing a p⁺–p⁺–n–n⁺ structure. High resolution X-ray diffraction was used to characterize the epitaxial layers. The Al composition of 2.8% was obtained by assuming the Bragg’s formula and Vegard’s law. Spectral response measurement of the diodes has been employed to investigate the temperature dependence of the band gap of In₁₋_xAl_xSb alloys in the range between 77 K and 260 K. The calculated results for energy gap of InAlSb were in good agreement with the available data and our experimental observation.

Keywords:	Energy gap Molecular beam epitaxy Moss- Burstein effect
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