Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO |
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| Institution: | 1. Key laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. School of Materials Science and Engineering and Materials Genome Institute, Shanghai University, Shanghai 200444, China;3. Department for Nanostructured Materials, Jozef Stefan Institute, Ljubljana SI-1000, Slovenia;4. China Academy of Engineering Physics, Institute of Fluid Physics, Sichuan 621900, China |
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| Abstract: | In this paper, the thermoelectric properties of ZnO doped with Al, Bi and Sn were investigated by combining experimental and theoretical methods. The average Seebeck coefficient of Bi doped ZnO over the measured temperature range is improved from ?90 to ?497 μV/K. However, segregation of Bi2O3 in ZnO:Bi sample, confirmed by FESEM, lead to enormous grain growth and low electrical conductivity, which makes Bi is not a good dopant to improve ZT value of ZnO. As a 4+ valence cation, Sn doping actually show an increase in carrier concentration to 1020 cm?3, further enhancing the electrical conductivity. Unfortunately, the Seebeck coefficient of ZnO:Sn samples is even lower than pure ZnO sample, which lead to a low ZT value. As for ZnO:Al sample, with nearly no change in lattice thermal conductivity, electrical conductivity and Seebeck coefficient were both enhanced. Threefold enhancement in ZT value has been achieved in ZnO:Al sample at 760 °C compared with pure ZnO. |
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| Keywords: | Thermoelectric oxide ZnO Dopant |
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