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SILAR deposited Bi2S3 thin film towards electrochemical supercapacitor
Affiliation:1. State Key Laboratory for Oxo Synthesis & Selective Oxidation, National Engineering Research Center for Fine Petrochemical Intermediates, Lanzhou Institute of Chemical Physics, CAS, Lanzhou, 730000, China;2. University of Chinese Academy of Sciences, Beijing, 100049, China;1. Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon, 425001, India;2. Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune 411007, India;3. Solar Cell Laboratory, LG Components R&D Center, 1271, Sa-Dong, Sanggrok-gu, Ansan-si, Gyeonggi-do 426-791, South Korea;4. Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, South Korea;5. Nano Material and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology, Nagpur 440010, India;1. Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S., India;2. Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, South Korea;3. Shripatrao Kadam Mahavidyalay, Shirval 412801, M.S., India;1. School of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China;2. School of Physics and Technology, University of Jinan, 336 West Road of Nan Xinzhuang, Jinan, 250022, Shandong Province, PR China;3. School of Science, Qilu University of Technology, Jinan 250353, PR China;4. Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin, 150025, PR China;1. Instituto de Ciencias Físicas, Laboratorio de espectroscopia, Universidad Nacional Autónoma de México, Apartado Postal 48-3, C.P. 62210 Cuernavaca, Morelos, Mexico;2. Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63155 Tepic, Nayarit, Mexico;3. Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos, Mexico
Abstract:Bi2S3 thin film electrode has been synthesized by simple and low cost successive ionic layer adsorption and reaction (SILAR) method on stainless steel (SS) substrate at room temperature. The formation of interconnected nanoparticles with nanoporous surface morphology has been achieved and which is favourable to the supercapacitor applications. Electrochemical supercapacitive performance of Bi2S3 thin film electrode has been performed through cyclic voltammetry, charge-discharge and stability studies in aqueous Na2SO4 electrolyte. The Bi2S3 thin film electrode exhibits the specific capacitance of 289 Fg−1 at 5 mVs−1 scan rate in 1 M Na2SO4 electrolyte.
Keywords:Thin film  SILAR  Supercapacitor
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