| Institution: | 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra 2601, ACT, Australia;2. Department of Physics, University of Dayton, 300 College Park, Dayton, OH 45469, USA;1. Interuniversity Microelectronics Center, Kapeldreef 75 B-3001, Leuven, Belgium;2. Applied Materials, Gloucester, MA 01930, USA;3. Applied Materials, Kapeldreef 75, B-3001 Leuven, Belgium;1. Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania, Italy;2. Dipartimento di Fisica e Astronomia, Università di Catania, Via Santa Sofia 64, 95125 Catania, Italy;3. LAAS, CNRS and University of Toulouse, 7 av. Du Col. Roche, 31400 Toulouse, France;4. University of Basel University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland;5. Istituto per la Microelettronica e Microsistemi (CNR-IMM), Via S. Sofia 64, 95123 Catania, Italy;6. CNR-IMM MATIS and Dipartimento di Fisica Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova, Italy;1. LAAS-CNRS, Université de Toulouse, UPS, 31031 Toulouse, France;2. Laser Systems & Solutions of Europe (LASSE), 145 rue des Caboeufs, 92230 Gennevilliers, France;3. CEA-LETI, 17 rue des Martyrs, 38054 Grenoble, France;4. IMM-CNR, Zona industriale, Strada VIII 5, 95121 Catania, Italy;1. Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, 35131 Padova, Italy;2. Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, Viale dell’Università 2, 35020 Legnaro, PD, Italy;3. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale Aldo Moro 5, I-00185 Roma, Italy;1. State Key Laboratory of Environment-friendly Energy Materials, School of Mathematics and Physics, Southwest University of Science and Technology, Mianyang 621010, China;2. Songshan Lake Materials Laboratory, Dongguan 523808, China |
