Spontaneous and stimulated emission in InAsSb-based LED heterostructures |
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| Institution: | 1. Ioffe Institute, St. Petersburg 194021, Russia;2. ITMO University, St. Petersburg 197101, Russia;3. Microsensor Technology, St. Petersburg 194223, Russia;4. Aalto University, Aalto FI-00076, Finland;5. Institute of Perspective Researches, Kazan 420111, Russia;1. Department of Orthopaedic Surgery, University of Connecticut, Farmington, Connecticut, U.S.A.;2. Department of Orthopaedic Sports Medicine, Technical University of Munich, Munich, Germany |
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| Abstract: | Electroluminescence of LED heterostructures with active layer made of InAsSb films grown on InAs substrates was studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission was observed with an optical cavity formed normal to the growth plane. The emission became spontaneous at higher temperatures due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole transitioning to the spin-orbit-splitted band. The spontaneous character of emission continued up to room temperature because of the influence of other Auger processes. The results obtained suggest that InAsSb-based LED heterostructures are promising for the fabrication of vertically-emitting mid-infrared lasers. |
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| Keywords: | InAsSb Electroluminescence Carrier recombination |
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