Ultra-violet photo-response characteristics of p-Si/i-SiO2/n-ZnO heterojunctions based on hydrothermal ZnO nanorods |
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| Institution: | 1. Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huai’an 223003, People''s Republic of China;2. Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080, People''s Republic of China;3. Jiangsu Provincial Key Laboratory of Palygorskite Science and Applied Technology, Huaiyin Institute of Technology, Huai’an 223003, People''s Republic of China;1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, South Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, South Korea;1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland;2. Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;3. Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszynski University, Warsaw, Poland;1. Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan;2. Department of Electrical Engineering, Chienkuo Technology University, Changhua 500, Taiwan;1. Millimeter-Wave Innovation Technology (MINT) Research Center, Dongguk University-Seoul, Seoul 100-715, South Korea;2. Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 100-715, South Korea;1. Photonics Laboratory, Department of Physics, Iran University of Science & Technology, Tehran, Iran;2. Nanophotonics Laboratory, Applied Science Research Center, Kharazmi University, Karaj, Iran;3. Photonics Laboratory, Department of Physics, Alzahra University, Tehran, Iran |
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| Abstract: | Hydrothermal zinc oxide (ZnO) nanorod (NR)-based p-Si/n-ZnO and p-Si/i-SiO2/n-ZnO heterojunctions were fabricated, and the effects of interfacial native SiO2 (~4 nm) on the I-V characteristics of heterojunctions under dark and ultra-violet illumination conditions were investigated. First, the structural and optical properties of ZnO seed crystals grown by sol-gel method and hydrothermal ZnO NRs on two different substrates of p-Si and p-Si/i-SiO2 were examined, and more improved optical and crystalline quality was obtained as revealed by photoluminescence and X-ray diffraction. The p-i-n heterojunctions showed ~3 times greater forward-bias currents and enhanced rectifying property than those of p-n junctions, which is attributed to the role of native SiO2 in carrier confinement by promoting the electron-hole recombination current through the deep level states of ZnO crystal. The measured ratios of photocurrent to dark current of the p-i-n structure were also greater under reverse bias (92–260) and forward bias (2.3–7.1) conditions than those (28–225 for reverse bias, 1.6–6.8 for forward bias) of p-n structure, and the improved photosensitivity of the p-i-n structure under reverse bias is due to lower density of recombination centers in the ZnO NR crystals. Fabricated ZnO NR heterojunction showed repeatable and fast photo-response transients under forward bias condition of which response and recovery times were 7.2 and 3.5 s for p-i-n and 4.3 and 1.7 s for p-n structures, respectively. |
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| Keywords: | ZnO nanorod Seed layer Hydrothermal growth I-V characteristics Structural properties Optical properties Rectification ratio Ideality factor Photo response transient |
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