Current-voltage characteristics of a Schottky diode under conditions of a current disturbance of the distribution function

The effect of the distortion of the equilibrium electron distribution function (due to the removal of electrons) in a semiconductor on the rectifying properties of a diode with a Schottky barrier is studied for an arbitrary (spherically symmetric) dispersion law. Specific calculations and an experiment are carried out for an electronic gallium arsenide-nickel contact.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 32–38, April, 1986.