Optical properties and origin of infrared light scattering centers in undoped semi-insulating GaAs crystals |
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| Authors: | T Katsumata H Okada T Kikuta T Fukuda |
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| Institution: | (1) Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, 211 Kawasaki, Japan |
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| Abstract: | The wavelength dependence and polarization characteristics of the infrared light scattered from an undoped GaAs crystal were investigated in the 90° angle infrared light scattering configuration. The scattering is Rayleigh scattering from scatterers which are always associated with the dislocations, and they are classified into three types,S, L
A
, andL
G
scatterers, according to their polarization characteristics. TheS, L
A
, andL
G
-scatterers are thought to be small As clusters, large As precipitates and large Ga precipitates, respectively. |
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| Keywords: | 61 70 r 78 90 +t 72 80 Ey |
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