Influence of initial surface reconstruction on the interface structure of HfO2/GaAs |
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| Authors: | Tetsuji Yasuda Noriyuki Miyata |
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| Institution: | a National Institute of Advanced Industrial Science and Technology (AIST), Nanoelectronics Research Institute, 1-1-1 Umezono, Central 2, Tsukuba, Ibaraki 305-8568, Japan
b National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan |
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| Abstract: | We show that the bonding structures and electrical properties of the HfO2/GaAs interface can be controlled by a choice of the reconstruction on the initial GaAs surface. Electron-beam evaporation of HfO2 onto the c(4 × 4) surface yielded As-O bonds at the interface, while Ga-O bonds were dominant at the interfaces formed on the (2 × 4) and (4 × 6) surfaces. Influences of the initial surface reconstruction on the interface structure persisted even after annealing at 673 K. Electrical characterization of Ir/HfO2/GaAs capacitors indicated that the interfacial As-O bonds cause weak Fermi level pinning. It was also suggested that the interfaces dominated by the Ga-O bonds have trapping states in the upper half of the GaAs bandgap. |
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| Keywords: | 68 55 aj 73 40 Qv 77 55 +f 78 68 +m 81 05 Ea 81 15 Ef 85 30 Tv |
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