Growth of fullerene on Ag and hydrogen-passivated Si substrates: Effect of electron beam exposure on growth modes

We have used Auger electron spectroscopy (AES) to investigate the effect of electron beam exposure on growth modes of fullerene (C₆₀) on substrates like Ag and hydrogen-passivated Si(1 1 1). The electron beam comprises of 3.4 keV electrons, which are used in the AES study. To investigate the effect, Auger signal (AS) vs. deposition time (t) measurements were conducted in a sequential mode, i.e., alternating deposition of C₆₀ and analysis using the electron beam. Duration of AES data collection after each deposition was the duration of exposure to electron beam in this experiment. For the growth study of C₆₀ on Ag, three AS-t plots were recorded for three different durations of exposure to electron beam. Changes in the AS-t plot, depending on the duration of exposure to the electron beam, reflect the electron beam-induced damage. Electron beam-induced damages of C₆₀ produce carbon materials of different densities and consequently transmission coefficient (α) of Auger electron through this material changes. In order to fit the AES (AS vs. t) data a model has been used which simultaneously provides the growth mode and the transmission coefficient. Observation of an increasing transmission coefficient with the increasing duration of exposure to the electron beam from α=0.34 to 0.60 indicates the change of the nature of the carbon material due to the partial damage of C₆₀.