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Structural and electrical characterizations of single tetragonal FeSe on Si substrate |
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| Authors: | XJ Wu ZZ Zhang JY Zhang ZG Ju DZ Shen BH Li CX Shan YM Lu |
| Institution: | aKey Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dongnanhu Road, Changchun 130033, Peoples’ Republic of China bGraduate School of the Chinese Academy of Sciences, Beijing 100049, Peoples’ Republic of China |
| Abstract: | (0 0 l)-Oriented FeSe thin films were successfully fabricated by metal organic chemical vapor deposition on Si substrate with large thermal mismatch. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicate that the films are of single tetragonal phase FeSe. Hysteresis loop indicates that the FeSe structure is ferromagnetic at room temperature with coercive force of 260 Oe. The FeSe films show p-type conduction with carrier concentration of 1021 cm?3, and the anomalous Hall effect was discussed. |
| Keywords: | A1 Crystal structure A1 X-ray diffraction A3 Metal organic chemical vapor deposition B2 Magnetic materials |
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