Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution |
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| Authors: | YW Chen YC Liu SX Lu CS Xu CL Shao |
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| Institution: | (1) Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun, 130024, P.R. China;(2) Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics and Graduate School,, Chinese Academy of Sciences, Changchun, 130033, P.R. China;(3) Department of Chemistry, School of Science, Beijing Institute of Technology, Beijing, 100081, P.R. China |
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| Abstract: | In-doped zinc oxide (ZnO:In) nanorods were grown onto SiO2/n-Si substrate without catalyst in aqueous solution. The ZnO:In nanorods/SiO2/n-Si heterostructure photovoltaic device was prepared. The structural and photoelectric properties of the as-grown ZnO:In nanorods were analyzed. ZnO:In nanorods had a strong and broad UV surface photovoltage response in the range of 300–400 nm, and the bands were identified. The photoelectric conversion properties of ZnO:In nanorods/SiO2/n-Si heterostructure were investigated. ZnO:In/SiO2/n-Si heterostructure showed a wide range photocurrent spectral response with high intensity in the UV and visible region. The rectifying behavior of this heterostructure was observed. Moreover, the device had a low turn-on voltage and a high breakdown voltage. Current–voltage characteristic was studied for the heterostructure, and the open-circuit voltage and short-circuit current were obtained. PACS 73.40.Lq; 85.35.Be; 81.16.Dn |
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