Optical properties of doped bismuth telluride crystals in the region of plasma effects |
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| Authors: | N P Stepanov S A Nemov M K Zhitinskaya T E Svechnikova |
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| Institution: | (1) Chernyshevskiĭ Transbaikal State Humanitarian and Pedagogical University, Chita, 672000, Russia;(2) St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia |
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| Abstract: | The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters. |
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